dim400nsm33 - f000 single switch igbt module replaces ds5883 - 3 ds5883 - 4 october 2011 (ln 28811 ) caut ion: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 1 / 8 www.dynexsemi.com features ? 10s short circuit withstand ? high thermal cycling capability ? soft punch through silicon ? isolated alsic base with aln substrates ? lead free c onstruction applications ? high reliability inverters ? motor controllers ? traction drives ? choppers the powe rline range of high power modules includes half bridge, chopper, dual, single and bi - directional switch configurations covering voltages from 12 00v to 65 00v and currents up to 2400a. the dim 400n s m33 - f000 is a single switch 33 00v, soft punch through n - chan nel enhancement mode, insulated gate bipolar transistor (igbt) module . the igbt has a wide reverse bias safe operating area (rbsoa) plus 10s short circuit withstand. this device is optimised for traction drives and other applications requiring high therma l cycling capability. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: dim 400n s m33 - f000 note: when ordering, please use the complete part number key parameters v ces 33 00 v v ce(sat) * (typ) 2.8 v i c (max) 4 00 a i c(pk) (max) 8 00 a * measured at the auxiliary terminals fig. 1 circuit configuration outline type cod e: n (see fig. 11 for further information) fig. 2 package g e 3(e) c 1(e) 2(c) 4(c)
dim 400nsm33 - f000 2 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may includ e potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. unit s v ces collector - emitter voltage v ge = 0v 3 300 v v ges gate - emitter voltage 20 v i c continuous collector current t case = 90 c 4 00 a i c(pk) peak collector current 1ms, t case = 115 c 8 00 a p max max. transistor power dissipation t case = 25c, t j = 150c 5200 w i 2 t diode i 2 t value v r = 0, t p = 10ms, t j = 125oc 24 ka 2 s v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 6 000 v q pd partial discharge C per module iec1287, v 1 = 35 00v, v 2 = 26 00v, 50hz rms 10 pc th ermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 33 mm clearance: 20 mm cti (comparative tracking index): 350 symbol parameter test conditions min typ. max units r th(j - c) thermal resistan ce C C th(j - c) thermal resistance C C th(c - h) thermal resistance C j junction temperature transistor - - 150 c diode - - 125 c t stg storage temperature range - - 40 - 125 c screw torque mounting C C C
dim 400nsm33 - f000 caut ion: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 3 / 8 www.dynexsemi.com electrical characteristics t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i ces collector cut - off current v ge = 0v, v ce = v ces 2 ma v ge = 0v, v ce = v ces , t case = 125c 30 ma i ges ga te leakage current v ge = 20 v, v ce = 0v 1 a v ge(th) gate threshold voltage i c = 4 0ma, v ge = v ce 5 .5 6 .5 7 . 0 v v ce(sat) ? collector - emitter saturation voltage v ge = 15v, i c = 4 00a 2.8 v v ge = 15v, i c = 4 00a, t j = 125c 3.6 v i f diode forward c urrent dc 400 a i fm diode maximum forward current t p = 1ms 800 a v f ? diode forward voltage (igbt arm) i f = 400a 2.9 v i f = 400a, t j = 125c 3.0 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz 72 nf q g gate charge 15v 10 c c re s reverse transfer capacitance v ce = 25v, v ge = 0v, f = 1mhz 1.1 nf l m module inductance 15 nh r int internal resistance 135 ? sc data short circuit current, i sc t j = 125c, v cc = 2500 v t p 10s, v ge 15v v ce (max) = v ces C l * x di/dt iec 60 747 - 9 1850 a note: ? me asured at the auxiliary terminals * l is the circuit inductance + l m
dim 400nsm33 - f000 4 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 400 a v ge = 15v v ce = 1800v c ge = 11 0nf l s ~ 100nh r g(on) = 8.2 ? r g(off) = 8.2 ? 2.1 s t f fall time 210 ns e off turn - off energy loss 520 mj t d(on) turn - on delay time 1130 ns t r rise time 245 ns e on turn - on energy loss r g(on) = 5.6 ? , r g(off) = 8.2 ? 620 mj q rr diode reverse recovery charge i f = 400a v ce = 1800v di f / dt = 2000a/s 160 c i rr diode reverse recovery current 330 a e rec diode reverse recovery energy 150 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 400a v ge = 1 5v v ce = 1800v c ge = 11 0nf l s ~ 100nh r g(on) = 8.2 ? r g(off) = 8.2 ? 2.15 s t f fall time 220 ns e off turn - off energy loss 600 mj t d(on) turn - on delay time 1160 ns t r rise time 285 ns e on turn - on energy loss r g(on) = 5.6 ? , r g(off) = 8 .2 ? 870 mj q rr diode reverse recovery charge i f = 400a v ce = 1800v di f /dt = 2000a/s 300 c i rr diode reverse recovery current 400 a e rec diode reverse recovery energy 300 mj
dim 400nsm33 - f000 caut ion: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 5 / 8 www.dynexsemi.com fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance
dim 400nsm33 - f000 6 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig . 9 diode reverse bias safe operating area fig. 10 transient thermal impedance
dim 400nsm33 - f000 caut ion: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 7 / 8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 9 00g module outline type code: n fig. 11 module outline drawing
dim 400nsm33 - f000 8 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intende d for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific applicati on . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarant ee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applica tions where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must n ot be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application de sign and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the pr oduct design is complete and final characterisation for vo lume production is in progress. the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sol d and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters oper ations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: + 44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_solutions@dynexsemi.com ? dynex semiconductor ltd. 2006 technical documentation C not for resale.
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